TO-263AB/D 2 PAK Tape and Reel Data and Package Dimensions, continued
TO-263AB/D 2 PAK Embossed Carrier Tape
Configuration: Figure 3.0
P0
D0
T
E1
F
K0
Wc
B0
E2
W
Tc
A0
P1
D1
User Direction of Feed
Dimensions are in millimeter
Pkg type
T O263AB/
D 2 PAK
(24mm)
A0
10.60
+/-0.10
B0
15.80
+/-0.10
W
24.0
+/-0.3
D0
1.55
+/-0.05
D1
1.60
+/-0.10
E1
1.75
+/-0.10
E2
22.25
min
F
11.50
+/-0.10
P1
16.0
+/-0.1
P0
4.0
+/-0.1
K0
4.90
+/-0.10
T
0.450
+/-0.150
Wc
21.0
+/-0.3
Tc
0.06
+/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum
Typical
component
0.9mm
maximum
B0
cavity
center line
0.9mm
maximum
10 deg maximum component rotation
Typical
Sketch A (Side or Front Sectional View)
Component Rotation
A0
component
center line
Sketch C (Top View)
Component lateral movement
TO-263AB/D 2 PAK
Reel Configuration:
Sketch B (Top View)
Component Rotation
Figure 4.0
W1 Measured at Hub
Dim A
Max
B Min
Dim C
Dim A
max
Dim N
Dim D
min
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
24mm
Reel
Option
13" Dia
Dim A
13.00
330
Dim B
0.059
1.5
Dim C
512 +0.020/-0.008
13 +0.5/-0.2
Dim D
0.795
20.2
Dim N
4.00
100
Dim W1
0.961 +0.078/-0.000
24.4 +2/0
Dim W2
1.197
30.4
Dim W3 (LSL-USL)
0.941 – 0.1.079
23.9 – 27.4
August 1999, Rev. B
相关PDF资料
NDB7060 MOSFET N-CH 60V 75A D2PAK
NDC7001C MOSFET N+P 60V 340MA SSOT6
NDC7002N_SB9G007 MOSFET N-CH DUAL 50V 6-SSOT
NDC7003P MOSFET 2P-CH 60V 340MA SSOT6
NDD03N50ZT4G MOSFET N-CH 500V 2.6A DPAK
NDD04N50Z-1G MOSFET N-CH 500V 3A IPAK
NDD05N50ZT4G MOSFET N-CH 500V 5A DPAK
NDF02N60ZH MOSFET N CH 600V 2.4A TO220FP
相关代理商/技术参数
NDB6060L 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDB6060L 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N D2-PAK
NDB6060L_Q 功能描述:MOSFET N-Ch LL FET Enhancement Mode RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NDB608A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB608AE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB608B 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB608BE 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor
NDB610A 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:N-Channel Enhancement Mode Field Effect Transistor